Hamidreza Hajihoseini will defend his doctoral thesis in Physics on May 11th at 13:00. The defence will take place in the Aula at the UI Main Building.
Only 45 people can attend the doctoral defence but it will also be streamed live and the link will be available soon on the UI website.
Dissertation title: High Power Impulse Magnetron Sputtering (HiPIMS): The effect of the stationary magnetic field on the deposition rate and ionized flux fraction
Opponents:
Dr. Peter Kelly, Professor and Head of Surface Engineering Group, Director of the Advanced Materials and Surface Engineering Research Centre, Manchester Metropolitan University, Manchester, UK.
Dr. Matjaž Panjan, Assistant researcher, Jozef Stefan Institute, Ljubljana, Slovenia.
Advisor: Dr. Jón Tómas Guðmundsson, Professor at the Faculty of Physical Sciences, University of Iceland, Iceland.
Doctoral committee:
Dr. Daniel Lundin, Professor, Department of Physics, Chemistry and Biology (IFM), Linköping University, Sweden.
Dr. Snorri Þorgeir Ingvarsson, Professor at the Faculty of Physical Sciences, University of Iceland, Iceland.
Chair of Ceremony: Dr. Oddur Ingólfsson, Professor and the Head of the Faculty of Physical Sciences, University of Iceland
Abstract:
High power impulse magnetron sputtering (HiPIMS) is a rather young deposition method capable of depositing dense and smooth thin films by providing a high amount of ionized sputtered material. However, the high-quality thin film comes at the cost of low deposition rate which hinders HiPIMS to be widely utilized in industry. Here the results of an experimental study on the effect of stationary magnetic field on the deposition rate, ionized flux fraction and properties of thin film deposited using the HiPIMS process, are presented. This includes vanadium, vanadium nitride, and nickel thin films deposition using the HiPIMS technique under various conditions, including varying confining magnetic field, working gas pressure, substrate bias and tilt angle. In each case, the properties of HiPIMS deposited films were
compared with corresponding dcMS sputtered film deposited under the same conditions. For this aim, various characterization techniques are used to determine the mass density, surface roughness, film
composition, microstructure, magnetic and electrical properties of deposited films. For the second part of the project, a variable magnet is utilized in order to systematically study the influence of the magnetic field on the HiPIMS process. For each magnetic field configuration, a series of deposition rate and ionized flux fraction measurements are carried out at various positions in front of the target to develop a picture spatial distribution of neutrals and ionized sputtered materials. This part of the study continued by measurement of sideways deposition rate and ionized flux fraction for both HiPIMS and dcMS. This is to examine the link between an increase in sideways material transport in HiPIMS and a commonly reported reduction of the deposition rate in HiPIMS compared to dcMS.
About the doctoral candidate:
Hamidreza Hajihoseini was born in Yazd, Iran in 1988. He holds his B.Sc. degree in electronic engineering (2011) and M.Sc. degree in semiconductor devices (2014) from Iran. He started his Ph.D. studies in Physics at the University of Iceland in 2016. During his doctoral research, he has published nine journal papers, in addition to numerous presentations and posters. He received Erasmus+ exchange study and traineeship grants in 2017 and 2018, for research exchange at the KTH Royal Institute of Technology in Stockholm, Sweden, and University of Paris-Sud in Orsay, France. He lives with his wife, Sahar Rahpeyma, in Reykjavik.